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  • 光学材料及元件中应力双折射的成像测量Imaging measurement of stress birefringence in optical materials and components

     

    光学元件内部应力产生的双折射效应会影响到光的偏振状态,而这在微平板印刷、激光光学和天文学等应用方面是不能容忍的。通常,精确测量微小应力双折射的要求非常苛刻。而能够同时给出应力双折射空间分布及其方向的图像偏振测量仪,使这一问题得到了很好的解决。在不太严格的条件下,光学玻璃通常可认为是均匀的,其折射率在各个方向上处处相等的。但是,由材料原因或者生产过程形成的应力会使材料的结构发生形变,从而沿轴向产生了局部密度差异。光在介质中的传播速度与材料密度有关,局部密度的变化导致了光在介质中传播时的速度差异,以

  • 半导体行业基础材料-高纯度硅

     

    硅是一种随处可见的元素,在地壳中的含量高达26.3%(仅次于氧),但高纯度的单质硅却是一种战略级别的先进基础材料,拥有着众多独特的性质,符合光伏产业和半导体产业对元器件的独特要求。以硅为基础材料制作的太阳能电池板能够根据光电效应单向输送电流  在正常的环境下,纯硅的电阻率为214×1000欧姆/厘米。在硅晶体中,每个原子具备四个电子,不多不少,所有外层电子都形成了完美的共价键,不能到处运动,导致了电阻率奇高,几乎就是绝缘体——只能通过极小的电流。  表面上看,似乎硅并不是很好的材料,但高纯度的单质硅却受到以下

  • 蒸发舟的产品介绍Product introduction of evaporation boat

     

    蒸发舟的产品参数:  1.规格按用户提供尺度制作。  2.材质:M0-1或铝基合金,纯度:99.95%以上,密度:210.2g/cm^3,熔点:2610°C。  3.制作方法板材经压延折弯铆接。  4.习惯温度可供在1400*C-1900°C以上条件使用。Product parameters of evaporation boat:1. The specifications are made according to the standards provided by users.2. Material: m0-1 or aluminum base alloy, purity: above 99.95%, density: 210.2g/cm ^ 3, melting point: 2610 ° C.3. Manufacturing method the plate is pressed, bent and riveted.4. The

  • 钨舟的更换和安装Replacement and installation of tungsten boat

     

    打开仓门后,我们先检查一下电子传输层与阴极修饰层材料是否足够,这两者通常已经放在仓里的蒸发源位置了,不需要每次更换,只需要定时添加就OK了。After opening the door, we first check whether the materials of the electron transport layer and cathode modification layer are sufficient. These two materials are usually placed in the evaporation source position in the bin, and do not need to be replaced every time. We only need to add them regularly.接着我们要更换钨舟。钨舟是用来装铝粒的。主编一米八几的个子

  • 真空蒸发镀膜Vacuum evaporation coating

     

    The method of heat evaporation in high vacuum to convert the plating into gas phase and then condense on the surface of the matrix is called evaporation coating (abbreviated as evaporation). Like liquids, solids more or less vaporize (sublimate) at any temperature, forming the vapor of the substance. In a high vacuum, the plating is heated to a high temperature, and the saturated vapor at the corresponding temperature is emitted upwards. The fluxes of the evaporated atoms in all directions are not equal. The substrate is positioned above the vapor source to block the vapor flow, on which the vapor forms a solidified film. In order to make up for the solidified vapor, the evaporation source must supply the vapor in a certain proportion. The heating methods include resistance heating and electron beam heating. Electron beam heating is used to melt metals with high melting points such as tungsten (melting point 3 380 ℃), molybdenum (melting point 2 610 ℃) and tantalum (melting point 3 1

  • 镀膜技术十个主要问题及答案Coating technology ten main problems and solutions

     

    The coating technology can be divided into (1) vacuum evaporation (2) electroplating (3) chemical reaction (4) heat treatment (5) physical or mechanical treatment

    Commonly used vacuum pumps can be divided into: (1) mechanical pump (2) diffusion pump (3) turbo pump (4) adsorption pump (5) suction pump vacuum pump suction pump range: pump suction fan pump 10-1 ~ 10-4 millibar dispersion pump 10-3 ~ 10-6 millibar vortex pump 10-3 ~ 10-9 millibar suction pump 10-3 ~ 10-4 millibar suction pump 10-4 ~ 10-10 millibar

  • 溅射镀膜工艺Sputtering coating process

     

    Sputtering coating, usually refers to the magnetron sputtering coating, belongs to the sputtering method at low temperature. The process requirement of vacuum in 1 x 10-3 torr, namely 1.3 x 10-3 pa vacuum inert gas argon (Ar), and the plastic base material (anode) and metal target material (cathode) and high voltage direct current (dc), because the glow discharge (glow discharge) produced by the electronic excitation of inert gas, plasma, plasma to metal atom bomb out of target material, is deposited on the plastic base material.

  • 溅射不起辉的常见原因Sputtering is not a common cause of brightness

     

    When magnetron sputtering a metal target, there are many reasons for the failure to glow, the common main reasons are:
    1. Is the installation of target material accurate?
    2. Whether the surface of the target material is clean. The surface of the metal target may be oxidized or there may be unclean substances, which can be cleaned after polishing. 3. Check the target power supply. Short circuit between target and ground. Turn off the machine, unload the sputtering target of the equipment, and carefully clean the parts near the target; Press the cover of the screw too tight, there is no appropriate distance between the target material, adjust the distance.
    5. Does the surface strength of the permanent magnet target drop too much? If it drops too much, the magnetic steel needs to be replaced.
    6. What is the difference between the sputtering vacuum and the previous one? Change different target material, the luminous pressure is not the same.

  • 大力推进半导体钽靶材国产化进程

     

    【铝道网】“芯片或集成电路产业是信息技术产业的核心,是衡量一个国家产业竞争力和综合国力的重要标志,近年来,中国芯片产业每年进口额远超石油,高达2000亿美元以上,高度依赖进口。”全国人大代表、中色(宁夏)东方集团有限公司西材院党委委员、铍材研究所党支部书记、所长王东新在接受记者采访时谈到我国芯片进口问题滔滔不绝。“物理气相沉积(PVD)是半导体芯片生产过程中关键的工艺之一,溅射靶材作为半导体芯片生产工艺中的关键耗材目前也主要依赖进口,希望国家能大力推进半导体钽靶材国产化。”王东新对记者说。随着我国的快速发

  • 部分高端靶材实现产业化,原材料制备难题待破

     

    集成电路的飞速发展,离不开材料和系统集成技术的支撑。高纯金属溅射靶材作为芯片制造、封装中物理气相沉积(PVD)工艺所需关键材料,应用于各种功能薄膜的制备。它的发展壮大不仅能极大地带动上游我国传统有色金属材料产业结构升级,更能促进下游电子制造产业的技术进步和稳定快速发展。国内高纯溅射靶材企业崭露头角在半导体衬底(基片)上生长各种具有重要功能的薄膜是集成电路芯片生产制造中最核心的工艺之一。基于物理气相沉积(PVD)的溅射工艺具有薄膜纯度高、成膜质量好、沉积速度快、工艺稳定可靠等优点,广泛应用于集成电路生产制造中

  • 我国稀贵金属溅射靶材制备已打破国外垄断

     

    原标题:我国稀贵金属溅射靶材制备已打破国外垄断  [观察者网 综合报道]  据云南省科技厅11月28日消息称,云南省贵金属材料重点实验室研发团队在主任胡昌义带领下,开展电子信息产业用稀贵金属溅射靶材的关键制备技术及工程化应用研究,成功制备镍铂(NiPt)、钴铬铂硼(CoCrPtB)等靶材和钌(Ru)、钴铬铂二氧化硅(CoCrPt-SiO2)靶。研发成果申请专利25件,授权11件,制定行业标准1项,发表论文66篇,荣获2018年中国有色金属工业科技进步一等奖。据预测,未来5年,世界溅射靶材的市场规模将超过160亿美元。此次我国稀贵金属溅射靶材

  • 国内靶材行业的发展机遇分析及企业格局

     

    近日,云南省贵金属材料重点实验室成功研发出稀贵金属溅射靶材,打破国外垄断,利好靶材原材料成本的降低。本文着眼于靶材产业链及企业格局的分析,认为有如下因素利好国内靶材企业的发展: 1、下游半导体及面板产业产能转移国内;2、进口靶材免税期年底到期;3、技术突破;4、国家扶持及进口替代。  一、靶材产业链  溅射工艺属于物理气相沉积技术的一种,是制备电子薄膜材料的关键技术之一。在电子信息产业的发展过程中,金属薄膜的制备十分重要。溅射工艺利用离子源产生的离子,在真空中加速聚集成高速离子流,轰击固体表面,离子和

  • 新型纳米银线材料技术突破,让触控无所不在成为可能

     

    在导电物质中,新型的纳米银线作为一维的纳米导电材料,在尺寸由10微米级降至10纳米级时,其粒径虽然只改变了1000倍,但换算成体积时却接近了10的9次方的倍数。因此在同样的体积内,其电阻值将能下降到银材料导电能力的极限值,与传统的银线材料导电电阻相比,一维的纳米银线电阻值更低。  经过多年的努力,科学家们已经成熟解决了纳米材料的活性难题,通过各种保护措施,让很多纳米导电材料都进入了大量商用阶段。其中纳米银线材料除了银材质本身优良的导电性能外,其纳米尺寸的低体积电阻效应,银材料自有的柔性与纳米材料堆叠状态的可

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