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磁控溅射技术(MS)

在磁控溅射中,由于运动电子在磁场中受到洛仑兹力,它们的运动轨迹会发生弯曲甚至产生螺旋运动,其运动路径变长,因而增加了与工作气体分子碰撞的次数,使等离子体密度增大,从而磁控溅射速率得到很大的提高,而且可以在较低的溅射电压和气压下工作,降低薄膜污染的倾向;另一方面也提高了入射到衬底表面的原子的能量,因而可以在很大程度上改善薄膜的质量。同时,经过多次碰撞而丧失能量的电子到达阳极时,已变成低能电子,从而不会使基片过热。因此磁控溅射法具有“高速”、“低温”的优点。


In magnetron sputtering, the movement of electrons in magnetic field by lorentz force, their trajectory is bent and even produce spiral motion, the motion path, thus increased the number of collisions with gas molecules work, make the plasma density increases, thus magnetron sputtering rate is greatly improved, and can work under low sputtering voltage and air pressure, reduce the tendency of membrane pollution; On the other hand, it also increases the energy of the atoms incident on the substrate surface, thus greatly improving the quality of the film. At the same time, electrons that have lost energy after many collisions arrive at the anode as low-energy electrons, thus preventing the substrate from overheating. Therefore, magnetron sputtering method has the advantages of "high speed" and "low temperature".


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